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CRYOGENIC SENSORS

Field of application: the measurement of a temperature‚, magnet field and strain in the range 4.2-300 K, 0 - 15 T and +/- 2 x 10-3 respectively.

Example of application: an instrumentation of the superconductive magnet system and other cryogenic equipment (he similar sensors were used for the instrumentation of Tokamak-15, Russia).

MAIN PARAMETERS OF SENSORS:


Overall view
Overall view

Conventional symbols:

1 - sensor element

2 - sensor body

3 - hermetic

4 - current leads and voltage tapes

SEMICONDUCTOR RESISTANCE THERMOMETERS:


Semiconductor:

  • germanium

Dimension of sensor's body:

  • ø 4 x 6 mm

Connection scheme:

  • 2 or 4-wire

Min/Max range:

  • 4.2 - 400 K;

Sensitivity:

  • 100 - 400 K up to 5 %/K
  • 30 - 100 K up to 10 %/K
  • 4.2 - 30 K up to 100 %/K

Accuracy:

  • 30 - 400 K 2 %
  • 4.2 - 30 K 1 %

Measurement current:

  • up to 10 mA

Response time:

  • 10 ms or faster

Magnetic resistance influence:

  • < 0.01K on 8T by 4.2 K

SEMICONDUCTOR STRAIN GAUGES:


Semiconductor strain gauges

Conventional symbols:

1 - sensor element

2 - joint area

3 - current leads and voltage tapes

4 - insulator

5 - connections

Semiconductor:

  • silicium

Dimension of sensor's base:

  • 8 mm

Connection scheme:

  • 4-wire

Operate temperature region:

  • 4.2-400 K

Operate strain region:

  • +/- 2 x 10-3

Operate magnet field region:

  • < 15 T

Sensitivity:

  • 40 microV per 1 х 10-6 strain

Resistivity:

  • 200-3000 Ohm

Measurement current:

  • <1 mA

Temperature influence:

  • <0.03 %/K

HALL PROBES:


Hall probes

Conventional symbols:

1 - sensor element

2 - joint area

3 - current leads and voltage tapes

4 - insulator

Semiconductor:

  • silicium

Dimension of sensor's base:

  • 6x4x0.2 mm

Connection scheme:

  • 4-wire

Operate magnet field region:

  • 0-15 T

Operate temperature region:

  • 4.2-400 K
  • >20 mV per 1 T

Measurement current:

  • up to 10 mA

Temperature influence:

  • <0.03 %/K
 
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